Comparative Analysis of Power switches MOFET and IGBT Used in Power Applications
Article Sidebar
Main Article Content
Abstract
In this paper, deals with detailed analysis between MOSFET and IGBT. There always a race between MOSFET and IGBT in the power electronics markets. This paper will gives the complete details about them. This paper also discuss how they are used for various applications. By reading this paper any beginners who wants to need detailed analysis between IGBT and MOSGET they can get.
Article Details
References
Jelena Loncarski, Vito Guiseppe Monopoli, GuiseppeLeonardo Cascella and Francesco Cupertino,â€SiC-MOSFET and Si-IGBT-Based dc-dc Interleaved Converters for EV Chargers: Approach for Efficiency Comparison with Minimum Switching Losses Based on Complete Parasitic Modeling†nergies 2020, 13(17),4585; https://doi.org/10.3390/en13174585
D. Pappis, L. Menezes and P. Zacharias, "Comparison of the short circuit capability of planar and trench SiC MOSFETs", PCIM Europe 2017; International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management; Proceedings of, May 2017.
Peng Luo;Hong Yao Long;Mark R. Sweet;M. M. De Souza;E. M. S. Narayanan, “Analysis of a clustered IGBT and silicon carbide MOSFET hybrid switch†2017 IEEE 26th International Symposium on Industrial Electronics (ISIE) , Year: 2017 | Conference Paper | Publisher: IEEE
Chitra Natesan, Anitha Deevdran, Swathi Chozhavendan, Thanika.D and Revathi.R, “ IGBT and MOSFET : A Comparitive study of power electronics inverter topology in distributed generationâ€, 2015 International Conference on Circuit, Power and Computing Technologies [ICCPCT], 978-1-4799-7075-9/15/$31.00©2015 IEEE
Tadaharu Minato;Shinji Aono;Katsumi Uryu Takashi Yamaguchi “Making a bridge from SJ- MOSFET to IGBT via RC-IGBT structure Concept for 600V class SJ-RC – IGBT in a single chip solution†2012 24th International Symposium on Power Semiconductor Devices and ICs Year: 2012 | Conference Paper | Publisher: IEEE
Pérez-Tomas et al., "Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors", J. Applied Physics, 2006.